BSC061N08NS5 Datasheet and Replacement
Type Designator: BSC061N08NS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
Package: PG-TDSON-8
BSC061N08NS5 substitution
BSC061N08NS5 Datasheet (PDF)
bsc061n08ns5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
bsc067n06ls3g.pdf

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes
bsc060p03ns3eg.pdf

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Datasheet: BSC046N02KS , BSC046N10NS3G , BSC050N03LS , BSC050N03MS , BSC052N08NS5 , BSC057N03LS , BSC057N03MS , BSC059N03S , IRFZ48N , BSC066N06NS , BSC070N10NS5 , BSC072N03LD , BSC072N08NS5 , BSC079N03SG , BSC080N03LS , BSC080N03MS , BSC0901NSI .
History: TJ50S06M3L | UTT30P06G-TQ2-R | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT
Keywords - BSC061N08NS5 MOSFET datasheet
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History: TJ50S06M3L | UTT30P06G-TQ2-R | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT



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