All MOSFET. BSC061N08NS5 Datasheet

 

BSC061N08NS5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC061N08NS5
   Marking Code: 061N08NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: PG-TDSON-8

 BSC061N08NS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC061N08NS5 Datasheet (PDF)

 ..1. Size:1173K  infineon
 bsc061n08ns5.pdf

BSC061N08NS5 BSC061N08NS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

 9.1. Size:592K  infineon
 bsc067n06ls3.pdf

BSC061N08NS5 BSC061N08NS5

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 9.2. Size:456K  infineon
 bsc067n06ls3g.pdf

BSC061N08NS5 BSC061N08NS5

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes

 9.3. Size:539K  infineon
 bsc060p03ns3eg.pdf

BSC061N08NS5 BSC061N08NS5

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 9.4. Size:658K  infineon
 bsc060n10ns3 bsc060n10ns3g.pdf

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 9.5. Size:400K  infineon
 bsc066n06ns.pdf

BSC061N08NS5 BSC061N08NS5

TypeBSC066N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested6.6 RDS(on),max mW Superior thermal resistanceID 64 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant

 9.6. Size:1307K  infineon
 bsc065n06ls5.pdf

BSC061N08NS5 BSC061N08NS5

BSC065N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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