All MOSFET. BSC061N08NS5 Datasheet

 

BSC061N08NS5 Datasheet and Replacement


   Type Designator: BSC061N08NS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: PG-TDSON-8
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BSC061N08NS5 Datasheet (PDF)

 ..1. Size:1173K  infineon
bsc061n08ns5.pdf pdf_icon

BSC061N08NS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

 9.1. Size:592K  infineon
bsc067n06ls3.pdf pdf_icon

BSC061N08NS5

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 9.2. Size:456K  infineon
bsc067n06ls3g.pdf pdf_icon

BSC061N08NS5

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes

 9.3. Size:539K  infineon
bsc060p03ns3eg.pdf pdf_icon

BSC061N08NS5

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - BSC061N08NS5 MOSFET datasheet

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