BSC066N06NS Datasheet and Replacement
Type Designator: BSC066N06NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: PG-TDSON-8
BSC066N06NS substitution
BSC066N06NS Datasheet (PDF)
bsc066n06ns.pdf

TypeBSC066N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested6.6 RDS(on),max mW Superior thermal resistanceID 64 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant
bsc067n06ls3g.pdf

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes
bsc060p03ns3eg.pdf

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Datasheet: BSC046N10NS3G , BSC050N03LS , BSC050N03MS , BSC052N08NS5 , BSC057N03LS , BSC057N03MS , BSC059N03S , BSC061N08NS5 , NCEP15T14 , BSC070N10NS5 , BSC072N03LD , BSC072N08NS5 , BSC079N03SG , BSC080N03LS , BSC080N03MS , BSC0901NSI , BSC0902NSI .
History: 2SK1446 | SVF2N60CNF | BUK9624-55A
Keywords - BSC066N06NS MOSFET datasheet
BSC066N06NS cross reference
BSC066N06NS equivalent finder
BSC066N06NS lookup
BSC066N06NS substitution
BSC066N06NS replacement
History: 2SK1446 | SVF2N60CNF | BUK9624-55A



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