BSC066N06NS MOSFET Datasheet: N-Ch, 60V, 15A. Full specification with pinout and replacement list

BSC066N06NS Specs and Replacement

Type Designator: BSC066N06NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: PG-TDSON-8

BSC066N06NS substitution

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BSC066N06NS datasheet

..1. Size:400K infineon
bsc066n06ns.pdf pdf_icon

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9.1. Size:592K infineon
bsc067n06ls3.pdf pdf_icon

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9.2. Size:456K infineon
bsc067n06ls3g.pdf pdf_icon

Type BSC067N06LS3 G Product Summary OptiMOSTM3 Power-Transistor Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 6.7 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes... See More ⇒

9.3. Size:539K infineon
bsc060p03ns3eg.pdf pdf_icon

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