TypeBSC066N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested6.6 RDS(on),max mW Superior thermal resistanceID 64 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant

pe % ! % TM# %?88,A=:2?E1)R + F2=:7:65 244@C5:?8

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes

& $ "& '! $ $;B1= '=-:>5>?;=$=;0@/? &@99-=D VFeatures DS 6.0m Q C:?8=6 ) 92??6= :? ,EA6B,( DS(on) max1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C 100 ADQ T @A6B2D:?8 D6>A6B2DEB6PGTDSON8Q F2=2?496 B2D65Q . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8Q "2=

% ! !% TM #:A0 DQ ' 381>>5?B=1

BSC065N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re