BSC070N10NS5
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC070N10NS5
Marking Code: 070N10NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package: PG-TDSON-8
BSC070N10NS5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC070N10NS5
Datasheet (PDF)
..1. Size:1175K infineon
bsc070n10ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal
0.1. Size:985K infineon
bsc070n10ns5sc.pdf
BSC070N10NS5SCMOSFETPG-WSON-8-2OptiMOSTM 5 Power-Transistor, 100 VFeatures Double sided cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-fr
3.2. Size:434K infineon
bsc070n10ns3g.pdf
BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;
Datasheet: IRFP360LC
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