BSC072N08NS5
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC072N08NS5
Marking Code: 072N08NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072
Ohm
Package: PG-TDSON-8
BSC072N08NS5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC072N08NS5
Datasheet (PDF)
..1. Size:1168K infineon
bsc072n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
6.1. Size:1132K infineon
bsc072n04ld.pdf
BSC072N04LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 40 V8 17Features 26354 Dual N-channel, logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Halogen-free according to IEC61249-2-21 Superior thermal resistanceProduct Va
6.3. Size:317K infineon
bsc072n03ld.pdf
BSC072N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 7.2mDS(on),maxI 20 A Fast switching MOSFETs for SMPS DPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
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