BSC079N03SG Datasheet and Replacement
Type Designator: BSC079N03SG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: PG-TDSON-8
BSC079N03SG substitution
BSC079N03SG Datasheet (PDF)
bsc079n03sg.pdf

BSC079N03S GProduct SummaryOptiMOS2 Power-TransistorFeatures V 30 VDSR 7.9 Fast switching MOSFET for SMPS mDS(on),maxI 40 A Optimized technology for notebook DC/DC convertersD Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc079n03s.pdf

BSC079N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for notebook DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel Logic levelP-TDSON-8P-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resi
bsc079n03lscg.pdf

BSC079N03LSC GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Improved switching behaviourPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very l
Datasheet: BSC057N03LS , BSC057N03MS , BSC059N03S , BSC061N08NS5 , BSC066N06NS , BSC070N10NS5 , BSC072N03LD , BSC072N08NS5 , IRF1405 , BSC080N03LS , BSC080N03MS , BSC0901NSI , BSC0902NSI , BSC0904NSI , BSC0910NDI , BSC0911ND , BSC0921NDI .
History: AON6206 | IRFSL3107PBF | HGD120N06SL
Keywords - BSC079N03SG MOSFET datasheet
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History: AON6206 | IRFSL3107PBF | HGD120N06SL



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