BSC0925ND PDF and Equivalents Search

 

BSC0925ND Specs and Replacement

Type Designator: BSC0925ND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PG-TISON-8

BSC0925ND substitution

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BSC0925ND datasheet

 ..1. Size:586K  infineon
bsc0925nd.pdf pdf_icon

BSC0925ND

BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Dual N-channel OptiMOS MOSFET RDS(on),max 5 mW Optimized for clean switching ID 40 A 100% avalanche tested QOSS 8.6 nC Superior thermal resistance QG(0V..10V) 13 nC Optimized for high performance Buck converter Qualified according to JEDEC1) for target applications VPhase ... See More ⇒

 8.1. Size:690K  infineon
bsc0923ndi.pdf pdf_icon

BSC0925ND

BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 2.8 mW Logic level (4.5V rated) VGS=4.5 V 7 3.7 100% avalanche tested ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; R... See More ⇒

 8.2. Size:693K  infineon
bsc0921ndi.pdf pdf_icon

BSC0925ND

BSC0921NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 1.6 mW Logic level (4.5V rated) VGS=4.5 V 7 2.1 N-channel ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant... See More ⇒

 8.3. Size:685K  infineon
bsc0924ndi.pdf pdf_icon

BSC0925ND

BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Integrated monolithic Schottky-like diode RDS(on),max VGS=10 V 5 3.7 mW Optimized for high performance Buck converter VGS=4.5 V 7 5.2 Logic level (4.5V rated) ID 40 40 A 100% avalanche tested Qualified according to JEDEC1) for tar... See More ⇒

Detailed specifications: BSC0901NSI, BSC0902NSI, BSC0904NSI, BSC0910NDI, BSC0911ND, BSC0921NDI, BSC0923NDI, BSC0924NDI, 60N06, BSC097N06NS, BSC098N10NS5, BSC100N03MS, BSC117N08NS5, BSC120N03LS, BSC120N03MS, BSC150N03LD, BSC252N10NSF

Keywords - BSC0925ND MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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