All MOSFET. BSC120N03LS Datasheet

 

BSC120N03LS Datasheet and Replacement


   Type Designator: BSC120N03LS
   Marking Code: 120N03LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.4 nC
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PG-TDSON-8
 

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BSC120N03LS Datasheet (PDF)

 ..1. Size:686K  infineon
 bsc120n03ls .pdf pdf_icon

BSC120N03LS

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 ..2. Size:481K  infineon
 bsc120n03ls.pdf pdf_icon

BSC120N03LS

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

 0.1. Size:520K  infineon
 bsc120n03lsg.pdf pdf_icon

BSC120N03LS

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

 5.1. Size:524K  infineon
 bsc120n03msg.pdf pdf_icon

BSC120N03LS

BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

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Keywords - BSC120N03LS MOSFET datasheet

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