BSC252N10NSF Datasheet and Replacement
Type Designator: BSC252N10NSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0252 Ohm
Package: PG-TDSON-8
BSC252N10NSF substitution
BSC252N10NSF Datasheet (PDF)
bsc252n10nsf.pdf
% ! !% D #:A0A6C2EFC6R *3 7C66 =625 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C
bsc252n10nsf8 bsc252n10nsfg.pdf
% ! !% D #:A0A6C2EFC6R *3 7C66 =625 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C
Datasheet: BSC0925ND , BSC097N06NS , BSC098N10NS5 , BSC100N03MS , BSC117N08NS5 , BSC120N03LS , BSC120N03MS , BSC150N03LD , 20N60 , BSC500N20NS3G , BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ .
History: IRF7665S2TRPBF
Keywords - BSC252N10NSF MOSFET datasheet
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History: IRF7665S2TRPBF
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