All MOSFET. BSD235N Datasheet

 

BSD235N MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSD235N
   Marking Code: X6s
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.32 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-363

 BSD235N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSD235N Datasheet (PDF)

 ..1. Size:365K  infineon
 bsd235n.pdf

BSD235N BSD235N

BSD235NOptiMOS2 Small-Signal-TransistorProduct Summary FeaturesVDS 20 V Dual N-channelRDS(on),max VGS=4.5 V 350 mW Enhancement modeVGS=2.5 V 600 Super Logic level (2.5V rated)ID 0.95 A Avalanche rated Qualified according to AEC Q101PG-SOT-363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-211 2 3

 8.1. Size:521K  infineon
 bsd235c.pdf

BSD235N BSD235N

BSD235COptiMOS 2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 1200 350 mW Super Logic level (2.5V rated)VGS=2.5 V 2100 600 Avalanche ratedID -0.53 0.95 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-SOT-363 Halogen

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top