All MOSFET. BSD235N Datasheet

 

BSD235N Datasheet and Replacement


   Type Designator: BSD235N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-363
 

 BSD235N substitution

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BSD235N Datasheet (PDF)

 ..1. Size:365K  infineon
 bsd235n.pdf pdf_icon

BSD235N

BSD235NOptiMOS2 Small-Signal-TransistorProduct Summary FeaturesVDS 20 V Dual N-channelRDS(on),max VGS=4.5 V 350 mW Enhancement modeVGS=2.5 V 600 Super Logic level (2.5V rated)ID 0.95 A Avalanche rated Qualified according to AEC Q101PG-SOT-363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-211 2 3

 8.1. Size:521K  infineon
 bsd235c.pdf pdf_icon

BSD235N

BSD235COptiMOS 2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 1200 350 mW Super Logic level (2.5V rated)VGS=2.5 V 2100 600 Avalanche ratedID -0.53 0.95 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-SOT-363 Halogen

Datasheet: BSC117N08NS5 , BSC120N03LS , BSC120N03MS , BSC150N03LD , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , IRFP460 , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 .

Keywords - BSD235N MOSFET datasheet

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