BSD235N Spec and Replacement
Type Designator: BSD235N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-363
BSD235N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSD235N Specs
bsd235n.pdf
BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS 20 V Dual N-channel RDS(on),max VGS=4.5 V 350 mW Enhancement mode VGS=2.5 V 600 Super Logic level (2.5V rated) ID 0.95 A Avalanche rated Qualified according to AEC Q101 PG-SOT-363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3... See More ⇒
bsd235c.pdf
BSD235C OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel VDS -20 20 V Enhancement mode RDS(on),max VGS= 4.5 V 1200 350 mW Super Logic level (2.5V rated) VGS= 2.5 V 2100 600 Avalanche rated ID -0.53 0.95 A Qualified according to AEC Q101 100% lead-free; RoHS compliant PG-SOT-363 Halogen... See More ⇒
Detailed specifications: BSC117N08NS5 , BSC120N03LS , BSC120N03MS , BSC150N03LD , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , IRFP460 , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 .
Keywords - BSD235N MOSFET specs
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