BSD235N Datasheet. Specs and Replacement
Type Designator: BSD235N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-363
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BSD235N substitution
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BSD235N datasheet
bsd235n.pdf
BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS 20 V Dual N-channel RDS(on),max VGS=4.5 V 350 mW Enhancement mode VGS=2.5 V 600 Super Logic level (2.5V rated) ID 0.95 A Avalanche rated Qualified according to AEC Q101 PG-SOT-363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3... See More ⇒
bsd235c.pdf
BSD235C OptiMOS 2 + OptiMOS -P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel VDS -20 20 V Enhancement mode RDS(on),max VGS= 4.5 V 1200 350 mW Super Logic level (2.5V rated) VGS= 2.5 V 2100 600 Avalanche rated ID -0.53 0.95 A Qualified according to AEC Q101 100% lead-free; RoHS compliant PG-SOT-363 Halogen... See More ⇒
Detailed specifications: BSC117N08NS5, BSC120N03LS, BSC120N03MS, BSC150N03LD, BSC252N10NSF, BSC500N20NS3G, BSD214SN, BSD235C, 50N06, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3
Keywords - BSD235N MOSFET specs
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