BSD316SN MOSFET. Datasheet pdf. Equivalent
Type Designator: BSD316SN
Marking Code: X7s
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.6 nC
trⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT-363
BSD316SN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSD316SN Datasheet (PDF)
bsd316sn.pdf
BSD316SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-21123Type Package
bsd314spe.pdf
BSD314SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =-10 V 140mDS(on),max GS Enhancement modeV =-4.5 V 230GS Logic level (4.5V rated)I -1.5 AD ESD protectedPG-SOT-363 Qualified according AEC Q101654 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123Type Pac
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