All MOSFET. BSD316SN Datasheet

 

BSD316SN Datasheet and Replacement


   Type Designator: BSD316SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-363
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BSD316SN Datasheet (PDF)

 ..1. Size:183K  infineon
 bsd316sn.pdf pdf_icon

BSD316SN

BSD316SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-21123Type Package

 9.1. Size:154K  infineon
 bsd314spe.pdf pdf_icon

BSD316SN

BSD314SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =-10 V 140mDS(on),max GS Enhancement modeV =-4.5 V 230GS Logic level (4.5V rated)I -1.5 AD ESD protectedPG-SOT-363 Qualified according AEC Q101654 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123Type Pac

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History: NCEP6012AS | 25N10L-TF3-T | LSB55R066GT | TP0610K-T1 | NCEP12T13A | HSBE2730 | MME70R380PRH

Keywords - BSD316SN MOSFET datasheet

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