BSD816SN Specs and Replacement
Type Designator: BSD816SN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT-363
BSD816SN substitution
- MOSFET ⓘ Cross-Reference Search
BSD816SN datasheet
bsd816sn.pdf
BSD816SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 160 m DS(on),max GS Enhancement mode V =1.8 V 240 GS Ultra Logic level (1.8V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type... See More ⇒
Detailed specifications: BSC120N03MS, BSC150N03LD, BSC252N10NSF, BSC500N20NS3G, BSD214SN, BSD235C, BSD235N, BSD316SN, IRF640, BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI
Keywords - BSD816SN MOSFET specs
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