BSD816SN MOSFET. Datasheet pdf. Equivalent
Type Designator: BSD816SN
Marking Code: Xas
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.6 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT-363
BSD816SN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSD816SN Datasheet (PDF)
..1. Size:177K infineon
bsd816sn.pdf
bsd816sn.pdf
BSD816SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 160mDS(on),max GS Enhancement modeV =1.8 V 240GS Ultra Logic level (1.8V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant654 Halogen-free according to IEC61249-2-21123Type
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