All MOSFET. BSD816SN Datasheet

 

BSD816SN Datasheet and Replacement


   Type Designator: BSD816SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-363
 

 BSD816SN substitution

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BSD816SN Datasheet (PDF)

 ..1. Size:177K  infineon
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BSD816SN

BSD816SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 160mDS(on),max GS Enhancement modeV =1.8 V 240GS Ultra Logic level (1.8V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant654 Halogen-free according to IEC61249-2-21123Type

Datasheet: BSC120N03MS , BSC150N03LD , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , BSD235N , BSD316SN , IRFP460 , BSD840N , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI .

History: IRFU48ZPBF | HMS29N65 | MPSW65M046CFD | NCE50NF220K | BL7N65B-P | 2SJ409L | APT20M40HVR

Keywords - BSD816SN MOSFET datasheet

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