BSF035NE2LQ Specs and Replacement
Type Designator: BSF035NE2LQ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: MG-WDSON-2
BSF035NE2LQ substitution
- MOSFET ⓘ Cross-Reference Search
BSF035NE2LQ datasheet
bsf035ne2lq.pdf
BSF035NE2LQ OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 3.5 mW Low parasitic inductance ID 69 A Low profile (... See More ⇒
bsf030ne2lq.pdf
n-Channel Power MOSFET OptiMOS BSF030NE2LQ Data Sheet 2.3, 2011-09-19 Final Industrial & Multimarket OptiMOS Power-MOSFET BSF030NE2LQ 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS... See More ⇒
Detailed specifications: BSC500N20NS3G, BSD214SN, BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, IRFB4110, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI, BSH111BK, BSH112, BSH205G2
Keywords - BSF035NE2LQ MOSFET specs
BSF035NE2LQ cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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