BSF035NE2LQ PDF and Equivalents Search

 

BSF035NE2LQ Specs and Replacement

Type Designator: BSF035NE2LQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: MG-WDSON-2

BSF035NE2LQ substitution

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BSF035NE2LQ datasheet

 ..1. Size:864K  infineon
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BSF035NE2LQ

BSF035NE2LQ OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 3.5 mW Low parasitic inductance ID 69 A Low profile (... See More ⇒

 9.1. Size:1522K  infineon
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BSF035NE2LQ

n-Channel Power MOSFET OptiMOS BSF030NE2LQ Data Sheet 2.3, 2011-09-19 Final Industrial & Multimarket OptiMOS Power-MOSFET BSF030NE2LQ 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS... See More ⇒

Detailed specifications: BSC500N20NS3G, BSD214SN, BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, IRFB4110, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI, BSH111BK, BSH112, BSH205G2

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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