All MOSFET. BSF035NE2LQ Datasheet

 

BSF035NE2LQ Datasheet and Replacement


   Type Designator: BSF035NE2LQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: MG-WDSON-2
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BSF035NE2LQ Datasheet (PDF)

 ..1. Size:864K  infineon
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BSF035NE2LQ

BSF035NE2LQOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converterRDS(on),max 3.5 mW Low parasitic inductanceID 69 A Low profile (

 9.1. Size:1522K  infineon
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BSF035NE2LQ

n-Channel Power MOSFETOptiMOSBSF030NE2LQ Data Sheet2.3, 2011-09-19Final Industrial & MultimarketOptiMOS Power-MOSFETBSF030NE2LQ1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 12N80L-TF1-T | R6006JND3 | 1N70Z | AP30H80Q | BRM501D | SIHFR1N60A | BSC014N06NS

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