BSF450NE7NH3 Datasheet and Replacement
Type Designator: BSF450NE7NH3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: MG-WDSON-2
BSF450NE7NH3 substitution
BSF450NE7NH3 Datasheet (PDF)
bsf450ne7nh3.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GData SheetRev. 2.2FinalPower Management & MultimarketOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GCanPAK S1 DescriptionFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance
bsf450ne7nh3g.pdf

BSF450NE7NH3 GMOSFETCanPAK SOptiMOS3 Power-MOSFET, 75 VFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (
Datasheet: BSD235N , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , IRF3710 , BSG0811ND , BSG0813NDI , BSH111BK , BSH112 , BSH205G2 , BSL202SN , BSL205N , BSL207N .
History: IRFSL3107PBF | AON6206
Keywords - BSF450NE7NH3 MOSFET datasheet
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History: IRFSL3107PBF | AON6206



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