BSG0811ND Specs and Replacement
Type Designator: BSG0811ND
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PG-TISON8-4
BSG0811ND substitution
- MOSFET ⓘ Cross-Reference Search
BSG0811ND datasheet
bsg0811nd.pdf
BSG0811ND Product Summary Power Block Q1 Q2 Features VDS 25 25 V Dual asymmetric N-channel OptiMOS 5 MOSFET RDS(on),max VGS=10 V 3 0.8 mW Logic level (4.5V rated) VGS=4.5 V 4 1.1 Optimized for high performance buck converters ID 50 50 A Qualified according to JEDEC1) for target applications S1/D2 (VPhase) (5) (4) D1 (Vin) Pb-free lead plating; RoHS c... See More ⇒
bsg0810ndi.pdf
BSG0810NDI Product Summary Power Block Q1 Q2 Features VDS 25 25 V Dual asymmetric N-channel OptiMOS 5 MOSFET RDS(on),max VGS=10 V 3 0.85 mW Logic level (4.5V rated) VGS=4.5 V 4 1.2 Pb-free lead plating; RoHS compliant ID 50 50 A Optimized for high performance Buck converter S1/D2 (VPhase) (5) (4) D1 (Vin) Qualified according to JEDEC1) for target ap... See More ⇒
bsg0813ndi.pdf
BSG0813NDI Product Summary Power Block Q1 Q2 Features VDS 25 25 V Dual asymmetric N-channel OptiMOS 5 MOSFET RDS(on),max VGS=10 V 3 1.2 mW Logic level (4.5V rated) VGS=4.5 V 4 1.7 Optimized for high performance buck converters ID 50 50 A Pb-free lead plating; RoHS compliant S1/D2 (VPhase) (5) (4) D1 (Vin) Qualified according to JEDEC1) for target app... See More ⇒
Detailed specifications: BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, IRFB4227, BSG0813NDI, BSH111BK, BSH112, BSH205G2, BSL202SN, BSL205N, BSL207N, BSL214N
Keywords - BSG0811ND MOSFET specs
BSG0811ND cross reference
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BSG0811ND replacement
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