All MOSFET. BSH111BK Datasheet

 

BSH111BK Datasheet and Replacement


   Type Designator: BSH111BK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.302 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 0.21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 2.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-23
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BSH111BK Datasheet (PDF)

 ..1. Size:281K  nxp
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BSH111BK

BSH111BK55 V, N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disc

 8.1. Size:296K  philips
bsh111-01.pdf pdf_icon

BSH111BK

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3

 8.2. Size:281K  philips
bsh111.pdf pdf_icon

BSH111BK

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A

 9.1. Size:290K  philips
bsh112.pdf pdf_icon

BSH111BK

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: RSQ025P03TR | DH150N12B | 12N65KG-TF1-T | 10N40 | R5016ANJ | BSB280N15NZ3G | ELM13401CA

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