BSH111BK PDF and Equivalents Search

 

BSH111BK Specs and Replacement

Type Designator: BSH111BK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.302 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 2.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT-23

BSH111BK substitution

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BSH111BK datasheet

 ..1. Size:281K  nxp
bsh111bk.pdf pdf_icon

BSH111BK

BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disc... See More ⇒

 8.1. Size:296K  philips
bsh111-01.pdf pdf_icon

BSH111BK

BSH111 N-channel enhancement mode field-effect transistor Rev. 01 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3... See More ⇒

 8.2. Size:281K  philips
bsh111.pdf pdf_icon

BSH111BK

BSH111 N-channel enhancement mode field-effect transistor Rev. 02 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. A... See More ⇒

 9.1. Size:290K  philips
bsh112.pdf pdf_icon

BSH111BK

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH112 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa... See More ⇒

Detailed specifications: BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI, 10N60, BSH112, BSH205G2, BSL202SN, BSL205N, BSL207N, BSL214N, BSL215C, BSL302SN

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