BSH112 MOSFET Datasheet: N-Ch, 60V, 0.3A. Full specification with pinout and replacement list

BSH112 Specs and Replacement

Type Designator: BSH112

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT-23 SOT-346

BSH112 substitution

- MOSFET ⓘ Cross-Reference Search

BSH112 datasheet

..1. Size:290K philips
bsh112.pdf pdf_icon

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH112 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa... See More ⇒

0.1. Size:290K philips
bsh112-01.pdf pdf_icon

9.1. Size:296K philips
bsh111-01.pdf pdf_icon

BSH111 N-channel enhancement mode field-effect transistor Rev. 01 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3... See More ⇒

9.2. Size:281K philips
bsh111.pdf pdf_icon

BSH111 N-channel enhancement mode field-effect transistor Rev. 02 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability BSH111 in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. A... See More ⇒