All MOSFET. BSH112 Datasheet

 

BSH112 Datasheet and Replacement


   Type Designator: BSH112
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT-23 SOT-346
 

 BSH112 substitution

   - MOSFET ⓘ Cross-Reference Search

 

BSH112 Datasheet (PDF)

 ..1. Size:290K  philips
bsh112.pdf pdf_icon

BSH112

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

 0.1. Size:290K  philips
bsh112-01.pdf pdf_icon

BSH112

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa

 9.1. Size:296K  philips
bsh111-01.pdf pdf_icon

BSH112

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3

 9.2. Size:281K  philips
bsh111.pdf pdf_icon

BSH112

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A

Datasheet: BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI , BSH111BK , IRFB4110 , BSH205G2 , BSL202SN , BSL205N , BSL207N , BSL214N , BSL215C , BSL302SN , BSL303SPE .

History: FDJ127P | SI7655ADN | SHD2187B | QM4014D | NTJS4405NT4 | BUK968R3-40E | DMC31D5UDJ

Keywords - BSH112 MOSFET datasheet

 BSH112 cross reference
 BSH112 equivalent finder
 BSH112 lookup
 BSH112 substitution
 BSH112 replacement

 

 
Back to Top

 


 
.