BSH112 - Даташиты. Аналоги. Основные параметры
Наименование производителя: BSH112
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 8 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: SOT-23 SOT-346
Аналог (замена) для BSH112
BSH112 Datasheet (PDF)
bsh112.pdf

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa
bsh112-01.pdf

BSH112N-channel enhancement mode field-effect transistorRev. 01 25 August 2000 Product specificationM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH112 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pa
bsh111-01.pdf

BSH111N-channel enhancement mode field-effect transistorRev. 01 07 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3
bsh111.pdf

BSH111N-channel enhancement mode field-effect transistorRev. 02 26 April 2002 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:BSH111 in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.3. A
Другие MOSFET... BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI , BSH111BK , P55NF06 , BSH205G2 , BSL202SN , BSL205N , BSL207N , BSL214N , BSL215C , BSL302SN , BSL303SPE .
History: DG4N60 | AP3310GH | SWD7N65DA | BSP030 | STB100N6F7 | AP25N10GH | SWU12N70D
History: DG4N60 | AP3310GH | SWD7N65DA | BSP030 | STB100N6F7 | AP25N10GH | SWU12N70D



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