BSL202SN Datasheet and Replacement
Type Designator: BSL202SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27.5 nS
Cossⓘ - Output Capacitance: 278 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOT-457
BSL202SN substitution
BSL202SN Datasheet (PDF)
bsl202sn.pdf
BSL202SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 22mDS(on),max GS Enhancement modeV =2.5 V 36GS Super Logic level (2.5V rated)I 7.5 AD Avalanche rated dv /dt ratedTSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Inf
bsl207sp.pdf
Rev. 2.05BSL207SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 41 m Enhancement modeID -6 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated435 Pb-free lead plating; RoHS compliant 261 QualifiedaccordingtoAECQ101 P-TS
Datasheet: BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI , BSH111BK , BSH112 , BSH205G2 , IRF9540 , BSL205N , BSL207N , BSL214N , BSL215C , BSL302SN , BSL303SPE , BSL305SPE , BSL306N .
History: SQD50N04-4M1 | BLS70R420-P | APT50M75LFLL | STE15NA100 | NCE70N1K1R | IXFT15N100Q | BSF134N10NJ3G
Keywords - BSL202SN MOSFET datasheet
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History: SQD50N04-4M1 | BLS70R420-P | APT50M75LFLL | STE15NA100 | NCE70N1K1R | IXFT15N100Q | BSF134N10NJ3G
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