BSL215C
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSL215C
Marking Code: sPH
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.73
nC
trⓘ - Rise Time: 7.6
nS
Cossⓘ -
Output Capacitance: 46
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
SOT-457
BSL215C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSL215C
Datasheet (PDF)
..1. Size:405K infineon
bsl215c.pdf
BSL215COptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 140 mW Super Logic level (2.5V rated)VGS=2.5 V 280 250 Avalanche ratedID -1.5 1.5 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-TSOP6 Halogen free a
9.1. Size:413K infineon
bsl214n.pdf
BSL214NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7
9.2. Size:348K infineon
bsl211sp.pdf
Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101
9.3. Size:141K kexin
bsl211dv.pdf
SMD Type MOSFETTransistorsP-Channel Enhancement Mode MOSFETBSL211DV(KSL211DV) Features( )SOT-23-6 Unit: mm+0.1 Super Logic Level (2.5 V rated) 0.4-0.1 150C operating temperature6 5 4 Avalanche rated dv/dt rated 2 31+0.02DD 0.15 -0.02+0.01-0.01+0.2-0.1GGSS1 Drain 4 Source2 Drain 5 Drain3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 ,u
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