BSL215C Datasheet and Replacement
Type Designator: BSL215C
Marking Code: sPH
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 0.73 nC
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT-457
BSL215C substitution
BSL215C Datasheet (PDF)
bsl215c.pdf
BSL215COptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 140 mW Super Logic level (2.5V rated)VGS=2.5 V 280 250 Avalanche ratedID -1.5 1.5 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-TSOP6 Halogen free a
bsl211sp.pdf
Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101
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