BSL303SPE Datasheet and Replacement
Type Designator: BSL303SPE
Marking Code: sPV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 14 nC
tr ⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 482 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT-457
BSL303SPE substitution
BSL303SPE Datasheet (PDF)
bsl303spe.pdf

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL303SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL303SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 33m Enhancement modeVGS=-4.5 V 52 Logic level (4.5V rated)ID -6.3 A ESD protected
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty
bsl302sn.pdf

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - BSL303SPE MOSFET datasheet
BSL303SPE cross reference
BSL303SPE equivalent finder
BSL303SPE lookup
BSL303SPE substitution
BSL303SPE replacement