BSL305SPE Datasheet. Specs and Replacement
Type Designator: BSL305SPE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 338 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT-457
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BSL305SPE substitution
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BSL305SPE datasheet
bsl305spe.pdf
Mosfet Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, -30V BSL305SPE Data Sheet Rev. 2.0 Final Industrial & Multimarket BSL305SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features VDS -30 V P-channel RDS(on),max VGS=-10 V 45 m Enhancement mode VGS=-4.5 V 80 Logic level (4.5V rated) ID -5.3 A ESD protected ... See More ⇒
bsl308pe.pdf
BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-channel RDS(on),max VGS=-10 V 80 mW Enhancement mode VGS=-4.5 V 130 Logic level (4.5V rated) ID -2.0 A ESD protected PG-TSOP-6 Qualified according to AEC Q101 6 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-21 1 2 3 Ty... See More ⇒
bsl306n.pdf
BSL306N $=@6"$'F ' .99 '64;.9 (>.;?6?@ %>E Features 0 V DS T H5@ ) 7... See More ⇒
bsl302sn.pdf
BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 25 m DS(on),max GS Enhancement mode V =4.5 V 38 GS Logic level (4.5V rated) I 7.1 A D Avalanche rated dv /dt rated PG-TSOP-6 Pb-free lead plating; RoHS compliant 6 5 Qualified according to AEC Q101 4 1 2 3 Type Package Tape and Reel Informa... See More ⇒
Detailed specifications: BSH205G2, BSL202SN, BSL205N, BSL207N, BSL214N, BSL215C, BSL302SN, BSL303SPE, 2N7000, BSL306N, BSL308C, BSL316C, BSL606SN, BSL802SN, BSL806N, BSN20-7, BSN20BK
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