SI4810DY Datasheet. Specs and Replacement

Type Designator: SI4810DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: SO8

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SI4810DY datasheet

 ..1. Size:50K  vishay
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SI4810DY

Si4810DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 30 30 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 D D D D SO-8 SD 1 8 S D Ordering Information 2 7 SD 3 6 Si4810DY G Si4810DY-T1 (with Tape and Reel) G D 4... See More ⇒

 8.1. Size:65K  vishay
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SI4810DY

Specification Comparison Vishay Siliconix Si4810BDY vs. Si4810DY Description N-Channel, 30 V (D-S) MOSFET with Schottky Diode Package SOIC-8 Pin Out Identical Part Number Replacements Si4810BDY Replaces Si4810DY Si4810BDY-E3 (Lead (Pb)-free version) Replaces Si4810DY Si4810BDY-T1 Replaces Si4810DY-T1 Si4810BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4810DY-T1 ABSOLUTE MAXIMUM R... See More ⇒

 8.2. Size:79K  vishay
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SI4810DY

Si4810BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( )ID (A) Pb-free Fast Switching Speed 0.0135 at VGS = 10 V 10 Available 30 Low Gate Charge 0.020 at VGS = 4.5 V 8 RoHS* 100 % UIS and Rg Tested COMPLIANT SCHOTTKY PRODUCT SUMMARY APPLICATIONS Diode For... See More ⇒

 9.1. Size:261K  vishay
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SI4810DY

Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a... See More ⇒

Detailed specifications: SFW9Z24, SFW9Z34, SI3443DVPBF, SI3812DV, SI3851DV, SI3853DV, SI4410DY, SI4435DY, 13N50, SI4812DY, SI4816DY, SI4818DY, SI4831DY, SI4832DY, SI4833DY, SI6820DQ, SI6821DQ

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