BSL306N Datasheet and Replacement
Type Designator: BSL306N
Marking Code: sPN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6 nC
trⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT-457
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BSL306N Datasheet (PDF)
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty
bsl302sn.pdf

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa
bsl305spe.pdf

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL305SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL305SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 45m Enhancement modeVGS=-4.5 V 80 Logic level (4.5V rated)ID -5.3 A ESD protected
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CSD87355Q5D
Keywords - BSL306N MOSFET datasheet
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BSL306N replacement
History: CSD87355Q5D



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