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BSL306N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSL306N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.3 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
   Тип корпуса: SOT-457

 Аналог (замена) для BSL306N

 

 

BSL306N Datasheet (PDF)

 ..1. Size:418K  infineon
 bsl306n.pdf

BSL306N BSL306N

BSL306N$=@6"$'F ':.99 '64;.9 (>.;?6?@%>EFeatures 0 VDST H5@ ) 7

 9.1. Size:358K  infineon
 bsl308pe.pdf

BSL306N BSL306N

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty

 9.2. Size:146K  infineon
 bsl302sn.pdf

BSL306N BSL306N

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa

 9.3. Size:435K  infineon
 bsl305spe.pdf

BSL306N BSL306N

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL305SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL305SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 45m Enhancement modeVGS=-4.5 V 80 Logic level (4.5V rated)ID -5.3 A ESD protected

 9.4. Size:406K  infineon
 bsl308c.pdf

BSL306N BSL306N

BSL308COptiMOS P3 + Optimos 2 Small Signal TransistorProduct Summary Features Complementary P + N channel P N Enhancement modeVDS -30 30 V Logic level (4.5V rated)RDS(on),max VGS=10 V 80 57 mW Avalanche ratedVGS=4.5 V 130 93 ID -2.0 2.3 A Qualified according to AEC Q101 100% Lead-free; RoHS compliantPG-TSOP-6 Halogen free according

 9.5. Size:408K  infineon
 bsl303spe.pdf

BSL306N BSL306N

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL303SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL303SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 33m Enhancement modeVGS=-4.5 V 52 Logic level (4.5V rated)ID -6.3 A ESD protected

 9.6. Size:107K  infineon
 bsl307sp.pdf

BSL306N BSL306N

Rev 1.2BSL307SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -30 V P-ChannelRDS(on) 43 m Enhancement modeID -5.5 A Logic LevelPG-TSOP-6-1 150C operating temperature Avalanche rated dv/dt rated435261Drainpin 1,2,5,6Gatepin 3Type Package Tape and reel MarkingSourceBSL307SP PG-TSOP-6-1 L63

 9.7. Size:2412K  cn vbsemi
 bsl307sp.pdf

BSL306N BSL306N

BSL307SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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