BSL308C Datasheet and Replacement
Type Designator: BSL308C
Marking Code: sPS
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.5 nC
trⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT-457
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BSL308C Datasheet (PDF)
bsl308c.pdf

BSL308COptiMOS P3 + Optimos 2 Small Signal TransistorProduct Summary Features Complementary P + N channel P N Enhancement modeVDS -30 30 V Logic level (4.5V rated)RDS(on),max VGS=10 V 80 57 mW Avalanche ratedVGS=4.5 V 130 93 ID -2.0 2.3 A Qualified according to AEC Q101 100% Lead-free; RoHS compliantPG-TSOP-6 Halogen free according
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty
bsl302sn.pdf

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - BSL308C MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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