All MOSFET. BSL308C Datasheet

 

BSL308C Datasheet and Replacement


   Type Designator: BSL308C
   Marking Code: sPS
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.5 nC
   trⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: SOT-457
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BSL308C Datasheet (PDF)

 ..1. Size:406K  infineon
bsl308c.pdf pdf_icon

BSL308C

BSL308COptiMOS P3 + Optimos 2 Small Signal TransistorProduct Summary Features Complementary P + N channel P N Enhancement modeVDS -30 30 V Logic level (4.5V rated)RDS(on),max VGS=10 V 80 57 mW Avalanche ratedVGS=4.5 V 130 93 ID -2.0 2.3 A Qualified according to AEC Q101 100% Lead-free; RoHS compliantPG-TSOP-6 Halogen free according

 8.1. Size:358K  infineon
bsl308pe.pdf pdf_icon

BSL308C

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty

 9.1. Size:418K  infineon
bsl306n.pdf pdf_icon

BSL308C

BSL306N$=@6"$'F ':.99 '64;.9 (>.;?6?@%>EFeatures 0 VDST H5@ ) 7

 9.2. Size:146K  infineon
bsl302sn.pdf pdf_icon

BSL308C

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa

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History: LSF65R570GT | CSD16342Q5A

Keywords - BSL308C MOSFET datasheet

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