BSO220N03MD MOSFET. Datasheet pdf. Equivalent
Type Designator: BSO220N03MD
Marking Code: 220N03MD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.8 nC
trⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO-8
BSO220N03MD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSO220N03MD Datasheet (PDF)
bso220n03md.pdf
BSO220N03MD GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Dual N-channelR V =10 V 22mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 27GS Low FOMSW for High Frequency SMPSI 7.7 AD 100% Avalanche tested Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bso220n03md .pdf
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bso220n03mdg.pdf
BSO220N03MD GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Dual N-channelR V =10 V 22mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 27GS Low FOMSW for High Frequency SMPSI 7.7 AD 100% Avalanche tested Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bso220n03ms.pdf
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bso220n.pdf
Preliminary DataBSO 220NSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 20 VVDS Dual N ChannelDrain-Source on-state resistance 0.13RDS(on) Enhancement modeContinuous drain current 3.2 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO220N SO 8 Q67000-S4010Maximum Ratings, at Tj = 25 C, un
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NDB408A
History: NDB408A
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