BSO301SP
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSO301SP
Marking Code: 301SP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 12.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 102
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 1180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
SO-8
BSO301SP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSO301SP
Datasheet (PDF)
..1. Size:325K infineon
bso301sph bso301sp bso301sp2.pdf 
BSO301SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8.0mVGS= 10 VDS(on),max Enhancement modeVGS= 4.5 V12.0 A Logic levelI -14.9 AD 150C operating temperaturePG-DSO-8 Avalanche rated Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to
..2. Size:822K cn vbsemi
bso301sp.pdf
BSO301SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
9.1. Size:103K infineon
bso302sn.pdf
Preliminary DataBSO 302SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.013RDS(on) Enhancement modeContinuous drain current 9.8 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 302SN SO 8 Q67041-S4029Maximum Ratings, at Tj = 25
9.2. Size:332K infineon
bso303sp .pdf
BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS single P-Channel in SO8VGS=-4.5 V R 21mDS(on),max Enhancement modeVGS=-2.5 V 31m Logic levelI -9.1 AD 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE
9.3. Size:642K infineon
bso300n03s rev1.7 g.pdf
BSO300N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*- m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@
9.4. Size:102K infineon
bso304sn.pdf
Preliminary DataBSO 304SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.03RDS(on) Enhancement modeContinuous drain current 6.4 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 304 SN SO 8 Q67000-S4012Maximum Ratings, at Tj = 25
9.5. Size:462K infineon
bso303p.pdf
BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType
9.6. Size:108K infineon
bso307n.pdf
Preliminary DataBSO 307NSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 30 VVDS Dual N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 5 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 307 N SO 8 Q67000-S4012Maximum Ratings, at Tj = 25 C, un
9.7. Size:623K infineon
bso303sp.pdf
BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 21mW Enhancement modeVGS=-4.5 V31mW Logic levelID -9.1 A 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Ty
9.8. Size:111K infineon
bso305n.pdf
Preliminary DataBSO 305NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Dual N ChannelDrain-Source on-state resistance 0.035 Enhancement mode RDS(on) Continuous drain current 6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 305 N SO 8 Q67041-S4028Maximum Ratings, at Tj = 25 C, unl
9.9. Size:499K infineon
bso303ph 1.3.pdf
BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType
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