BSO301SP - описание и поиск аналогов

BSO301SP H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS P-Channel R 8.0 m VGS= 10 V DS(on),max Enhancement mode VGS= 4.5 V 12.0 A Logic level I -14.9 A D 150 C operating temperature PG-DSO-8 Avalanche rated Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to

BSO301SP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

Preliminary Data BSO 302SN SIPMOS Small-Signal-Transistor Features Product Summary Drain source voltage 30 V VDS Single N channel Drain-Source on-state resistance 0.013 RDS(on) Enhancement mode Continuous drain current 9.8 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 302SN SO 8 Q67041-S4029 Maximum Ratings, at Tj = 25

BSO303SP H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS single P-Channel in SO8 VGS=-4.5 V R 21 m DS(on),max Enhancement mode VGS=-2.5 V 31 m Logic level I -9.1 A D 150 C operating temperature PG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE

BSO300N03S "9@/; %;+877+;B Features V DS Q 2CD CG D49 ?8 ') - . 7@B -'*- m DS(on) max Q ) AD > J65 D649?@=@8I 7@B ?@D63@@

Preliminary Data BSO 304SN SIPMOS Small-Signal-Transistor Features Product Summary Drain source voltage 30 V VDS Single N channel Drain-Source on-state resistance 0.03 RDS(on) Enhancement mode Continuous drain current 6.4 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 304 SN SO 8 Q67000-S4012 Maximum Ratings, at Tj = 25

BSO303P H OptiMOS -P Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-Channel in SO8 VGS=-10V RDS(on),max 21 mW Enhancement mode VGS=-4.5V 32 Logic level ID -8.2 A 150 C operating temperature Qualified according JEDEC for target applications SO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant Type

Preliminary Data BSO 307N SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage 30 V VDS Dual N channel Drain-Source on-state resistance 0.05 RDS(on) Enhancement mode Continuous drain current 5 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 307 N SO 8 Q67000-S4012 Maximum Ratings, at Tj = 25 C, un

BSO303SP H OptiMOS -P Power-Transistor Product Summary Features VDS -30 V single P-Channel in SO8 RDS(on),max VGS=-10 V 21 mW Enhancement mode VGS=-4.5 V 31 mW Logic level ID -9.1 A 150 C operating temperature PG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Ty

Preliminary Data BSO 305N SIPMOS Small-Signal-Transistor Features Product Summary Drain source voltage 30 V VDS Dual N Channel Drain-Source on-state resistance 0.035 Enhancement mode RDS(on) Continuous drain current 6 A ID Avalanche rated Logic Level dv/dt rated Type Package Ordering Code BSO 305 N SO 8 Q67041-S4028 Maximum Ratings, at Tj = 25 C, unl

BSO303P H OptiMOS -P Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-Channel in SO8 VGS=-10V RDS(on),max 21 mW Enhancement mode VGS=-4.5V 32 Logic level ID -8.2 A 150 C operating temperature Qualified according JEDEC for target applications SO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant Type