BSO301SP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSO301SP
Маркировка: 301SP
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.79 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 12.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 102 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 1180 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm
Тип корпуса: SO-8
BSO301SP Datasheet (PDF)
bso301sph bso301sp bso301sp2.pdf
BSO301SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8.0mVGS= 10 VDS(on),max Enhancement modeVGS= 4.5 V12.0 A Logic levelI -14.9 AD 150C operating temperaturePG-DSO-8 Avalanche rated Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to
bso301sp.pdf
BSO301SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G
bso302sn.pdf
Preliminary DataBSO 302SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.013RDS(on) Enhancement modeContinuous drain current 9.8 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 302SN SO 8 Q67041-S4029Maximum Ratings, at Tj = 25
bso303sp .pdf
BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS single P-Channel in SO8VGS=-4.5 V R 21mDS(on),max Enhancement modeVGS=-2.5 V 31m Logic levelI -9.1 AD 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IE
bso300n03s rev1.7 g.pdf
BSO300N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*- m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@
bso304sn.pdf
Preliminary DataBSO 304SNSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Single N channelDrain-Source on-state resistance 0.03RDS(on) Enhancement modeContinuous drain current 6.4 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 304 SN SO 8 Q67000-S4012Maximum Ratings, at Tj = 25
bso303p.pdf
BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType
bso307n.pdf
Preliminary DataBSO 307NSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 30 VVDS Dual N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 5 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 307 N SO 8 Q67000-S4012Maximum Ratings, at Tj = 25 C, un
bso303sp.pdf
BSO303SP HOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 21mW Enhancement modeVGS=-4.5 V31mW Logic levelID -9.1 A 150C operating temperaturePG-DSO-8 Qualified according JEDEC for traget applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Ty
bso305n.pdf
Preliminary DataBSO 305NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 30 VVDS Dual N ChannelDrain-Source on-state resistance 0.035 Enhancement mode RDS(on) Continuous drain current 6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 305 N SO 8 Q67041-S4028Maximum Ratings, at Tj = 25 C, unl
bso303ph 1.3.pdf
BSO303P HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V Dual P-Channel in SO8VGS=-10VRDS(on),max 21mW Enhancement modeVGS=-4.5V 32 Logic level ID -8.2 A 150C operating temperature Qualified according JEDEC for target applicationsSO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliantType
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C