BSP298
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSP298
Marking Code: BSP298
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
SOT-223
BSP298
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSP298
Datasheet (PDF)
..1. Size:170K siemens
bsp298.pdf
BSP 298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 298 400 V 0.5 A 3 SOT-223 BSP 298Type Ordering Code Tape and Reel InformationBSP 298 Q67000-S200 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA
..2. Size:373K infineon
bsp298.pdf
BSP298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP298 400 V 0.5 A 3 PG-SOT223 BSP298Type Pb-free Tape and Reel Information PackagingBSP298 Yes L6327 DryMax
9.1. Size:169K siemens
bsp299.pdf
BSP 299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP 299Type Ordering Code Tape and Reel InformationBSP 299 Q67000-S225 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA
9.2. Size:318K infineon
bsp299.pdf
BSP299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP299Type Pb-free Tape and Reel InformationBSP 299 Yes L6327Maximum Ratings
9.3. Size:372K infineon
bsp297.pdf
Rev. 2.1BSP297SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 200 V N-ChannelRDS(on) 1.8 Enhancement modeID 0.66 A Logic LevelPG-SOT223 dv/dt ratedPb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321VPS05163PackagingType Package Tape and Reel Information MarkingPG-SOT223BSP297 L6327: 1000 pcs/reel
9.4. Size:381K infineon
bsp295.pdf
Rev 2.2BSP295SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS60 V N-ChannelRDS(on) 0.3 Enhancement modeID 1.8 A dv/dt ratedPG-SOT223Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 4321 VPS05163MarkingType Package Tape and Reel Information Marking PackagingPG-SOT223BSP295 L6327: 1000 pcs/reel BSP295 Non dryMaximum
9.5. Size:298K infineon
bsp296.pdf
Rev. 2.1BSP296SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 0.7 Enhancement modeID 1.1 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321 VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP296 L6433: 4000 pcs/reel
9.6. Size:569K infineon
bsp296n.pdf
BSP296NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max VGS=10 V 0.6 W Enhancement modeVGS=4.5 V 0.8 Logic level (4.5V rated)ID 1.2 A Avalanche rated Qualified according to AEC Q101PG-SOT223 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Tape and Reel Informati
9.7. Size:860K cn vbsemi
bsp296.pdf
BSP296www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET A
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