SI4832DY PDF and Equivalents Search

 

SI4832DY Specs and Replacement

Type Designator: SI4832DY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SO8

SI4832DY substitution

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SI4832DY datasheet

 ..1. Size:51K  vishay
si4832dy.pdf pdf_icon

SI4832DY

Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 30 30 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 D SO-8 SD 1 8 Ordering Information S D 2 7 Si4832DY SD Schottky Diode 3 6 Si4832DY-T1 (with Tape and Reel)... See More ⇒

 9.1. Size:65K  vishay
si4835dy 2.pdf pdf_icon

SI4832DY

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = -10 V -8.0 -30 30 0.033 @ VGS = -4.5 V -6.0 S S S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D D D D Ordering Information Si4835DY Si4835DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo... See More ⇒

 9.2. Size:68K  vishay
si4835bdy.pdf pdf_icon

SI4832DY

Si4835BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process D 100% Rg Tested 0.018 @ VGS = -10 V -9.6 -30 -30 -25 -25 APPLICATIONS 0.030 @ VGS = -4.5 V -7.5 D Load Switches - Notebook PCs - Desktop PCs S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top Vie... See More ⇒

 9.3. Size:265K  vishay
si4838bd.pdf pdf_icon

SI4832DY

New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0027 at VGS = 4.5 V 34 100 % Rg Tested 0.0032 at VGS = 2.5 V 12 31 33 nC 100 % UIS Tested 0.0040 at VGS = 1.8 V 28 APPLICATIONS Low VIN DC/DC SO-8 D S D 1 8 S 2 7 D D S 3 ... See More ⇒

Detailed specifications: SI3853DV, SI4410DY, SI4435DY, SI4810DY, SI4812DY, SI4816DY, SI4818DY, SI4831DY, IRFB3607, SI4833DY, SI6820DQ, SI6821DQ, SI6923DQ, SML1001H9, SML1001R1AN, SML1001R1BN, SML1001R1HN

Keywords - SI4832DY MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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