BSS123L6433
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSS123L6433
Marking Code: SAs
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 0.17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.78
nC
trⓘ - Rise Time: 3.1
nS
Cossⓘ -
Output Capacitance: 8.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
SOT-23
SOT-346
BSS123L6433
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSS123L6433
Datasheet (PDF)
..1. Size:125K infineon
bss123l6327 bss123l6433.pdf
Rev. 1.41BSS123SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 6 Enhancement modeID 0.17 A Logic LevelPG-SOT23 dv/dt rated3Drainpin 3Gate Qualified according to AEC Q101pin12Sourcepin 21VPS05161Type Package Pb-free Tape and Reel Information MarkingPG-SOT23 YesBSS123 L6327: 3000 pcs/reel SAs
7.1. Size:93K motorola
bss123lt1rev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS123LT1/DTMOS FET TransistorBSS123LT1NChannel3 DRAINMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 100 VdcCASE 31808, STYLE 21SOT23 (TO236AB)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp
7.2. Size:58K philips
bss123lt1-d.pdf
BSS123LT1Preferred DevicePower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures Pb-Free Packages are Available170 mAMPS100 VOLTSRDS(on) = 6 WN-Channel3MAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage VDSS 100 VdcGate-Source Voltage 1- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current Adc2-
7.3. Size:109K onsemi
bss123lt1g bvss123lt1g.pdf
BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value
7.4. Size:363K willas
bss123lt1.pdf
FM120-M WILLASTHRUBSS123LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VN-CHANNEL POWER MOSFETSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board s
7.5. Size:360K lrc
lbss123lt1g s-lbss123lt1g.pdf
LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA
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