All MOSFET. BSS138D87Z Datasheet

 

BSS138D87Z Datasheet and Replacement


   Type Designator: BSS138D87Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT-23 SOT-346
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BSS138D87Z Datasheet (PDF)

 7.1. Size:109K  diodes
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BSS138D87Z

BSS138DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensi

 7.2. Size:1263K  cn vbsemi
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BSS138D87Z

BSS138DWwww.VBsemi.twDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (mA) Halogen-free According to IEC 61249-2-21 Definition2.5 at VGS = 10 V60 300Low On-Resistance:2.5 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-363 Low Input and Output LeakageSC-70 TrenchFET

 7.3. Size:809K  cn yangzhou yangjie elec
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BSS138D87Z

RoHS COMPLIANT BSS138DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

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History: IXFD80N10 | IXFC80N10 | EKV550 | 1N65L-AA3-R | 2SK162 | AS2341 | DE275X2-501N16A

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