BSS138D87Z Datasheet and Replacement
Type Designator: BSS138D87Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT-23 SOT-346
BSS138D87Z substitution
BSS138D87Z Datasheet (PDF)
bss138dw.pdf
BSS138DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensi
bss138dw.pdf
BSS138DWwww.VBsemi.twDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (mA) Halogen-free According to IEC 61249-2-21 Definition2.5 at VGS = 10 V60 300Low On-Resistance:2.5 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-363 Low Input and Output LeakageSC-70 TrenchFET
bss138dw.pdf
RoHS COMPLIANT BSS138DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /
Datasheet: BSS123N , BSS123TA , BSS123TC , BSS126 , BSS127 , BSS127S , BSS127SSN , BSS131 , K2611 , BSS138L99Z , BSS138AKA , BSS138BKS , BSS138-G , BSS138LT1G , BSS138LT3 , BSS138LT3G , BSS138N .
History: R6009JNJ
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: R6009JNJ
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