SI6820DQ Datasheet. Specs and Replacement

Type Designator: SI6820DQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TSSOP8

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SI6820DQ datasheet

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SI6820DQ

Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 20 20 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VF (v) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 D K TSSOP-8 D K G 1 8 D S A 2 7 Si6820DQ S A 3 6 G A 4 5 S A Top View ABSOLUTE MAXIMUM RATINGS (TA ... See More ⇒

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SI6820DQ

Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.190 @ VGS = 4.5 V "1.7 20 20 0.280 @ VGS = 3.0 V "1.3 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 S K TSSOP-8 D K G 1 8 D S A 2 7 Si6821DQ S A 3 6 G A 4 5 D A Top View ABSO... See More ⇒

Detailed specifications: SI4435DY, SI4810DY, SI4812DY, SI4816DY, SI4818DY, SI4831DY, SI4832DY, SI4833DY, IRF530, SI6821DQ, SI6923DQ, SML1001H9, SML1001R1AN, SML1001R1BN, SML1001R1HN, SML1001R3AN, SML1001R3BN

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