SI6820DQ PDF Specs and Replacement
Type Designator: SI6820DQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TSSOP8
SI6820DQ substitution
SI6820DQ PDF Specs
si6820dq.pdf
Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 20 20 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VF (v) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 D K TSSOP-8 D K G 1 8 D S A 2 7 Si6820DQ S A 3 6 G A 4 5 S A Top View ABSOLUTE MAXIMUM RATINGS (TA ... See More ⇒
si6821dq.pdf
Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.190 @ VGS = 4.5 V "1.7 20 20 0.280 @ VGS = 3.0 V "1.3 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 S K TSSOP-8 D K G 1 8 D S A 2 7 Si6821DQ S A 3 6 G A 4 5 D A Top View ABSO... See More ⇒
Detailed specifications: SI4435DY , SI4810DY , SI4812DY , SI4816DY , SI4818DY , SI4831DY , SI4832DY , SI4833DY , IRF530 , SI6821DQ , SI6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , SML1001R3BN .
History: SFW9540
Keywords - SI6820DQ MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SFW9540
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