All MOSFET. BSS169 Datasheet

 

BSS169 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS169
   Marking Code: SFs
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 0.17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.1 nC
   trⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT-23

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BSS169 Datasheet (PDF)

 ..1. Size:412K  infineon
 bss169.pdf

BSS169 BSS169

BSS169SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max 12 W Depletion modeIDSS,min 0.09 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101Type Package Pb-free Tape and Reel Info

 ..2. Size:769K  slkor
 bss169.pdf

BSS169 BSS169

BSS169100V N-Channel MOSFETV(BR)DSS RDS(on)MAXID SOT-23234m @ 10V267m @ 6V100V 2A0.118(3.00)0.110(2.80)278m @ 4.5V30.055(1.40)0.047(1.20)Features1 20.079(2.00) - TrenchFET Power MOSFET 0.071(1.80) - Low RDS(ON). - Surface mount package.0.007(0.150)0.002(0.080)0.041(1.05)0.035(0.90)0.100(2.55)Mechanical data0.089(2.25) - Case: SOT-23,

 ..3. Size:1728K  cn vbsemi
 bss169.pdf

BSS169 BSS169

BSS169www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting

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