All MOSFET. BSS606N Datasheet

 

BSS606N Datasheet and Replacement


   Type Designator: BSS606N
   Marking Code: KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.7 nC
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-89
 

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BSS606N Datasheet (PDF)

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BSS606N

BSS606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 3.2 A Avalanche rated Qualified according to AEC Q101PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant4 1 2 3 Type Package Tape and Reel Information Marking Halog

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BSS606N

 9.1. Size:62K  comset
 bss60a bss61a bss62a.pdf pdf_icon

BSS606N

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu

Datasheet: BSS138N , BSS138TA , BSS138TC , BSS139 , BSS159N , BSS169 , BSS214NW , BSS225 , IRF540N , BSS670S2L , BSS7728N , BSS7728NG , BSS806NE , BSS816NW , BSS84-7 , BSS84AKMB , BSS84TA .

History: 4N65L-TQ2-T | SI3493DV | ZXMN10A11GTC | SIHFR420A

Keywords - BSS606N MOSFET datasheet

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