All MOSFET. BSS606N Datasheet

 

BSS606N Datasheet and Replacement


   Type Designator: BSS606N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-89
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BSS606N Datasheet (PDF)

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BSS606N

BSS606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 3.2 A Avalanche rated Qualified according to AEC Q101PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant4 1 2 3 Type Package Tape and Reel Information Marking Halog

 0.1. Size:3991K  cn tech public
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BSS606N

 9.1. Size:62K  comset
 bss60a bss61a bss62a.pdf pdf_icon

BSS606N

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AS3418 | RW1C020UN | IRF441 | AP9926GEO | STD4N62K3 | TMPF16N60A | GSM3050S

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