All MOSFET. BSS606N Datasheet

 

BSS606N MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS606N
   Marking Code: KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.7 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-89

 BSS606N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS606N Datasheet (PDF)

 ..1. Size:410K  infineon
 bss606n.pdf

BSS606N BSS606N

BSS606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 3.2 A Avalanche rated Qualified according to AEC Q101PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant4 1 2 3 Type Package Tape and Reel Information Marking Halog

 0.1. Size:3991K  cn tech public
 bss606n-p.pdf

BSS606N BSS606N

 9.1. Size:62K  comset
 bss60a bss61a bss62a.pdf

BSS606N BSS606N

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORSThey are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCEP01P60AG | IRF7353D1PBF

 

 
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