All MOSFET. SI6821DQ Datasheet

 

SI6821DQ Datasheet and Replacement


   Type Designator: SI6821DQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TSSOP8
 

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SI6821DQ Datasheet (PDF)

 ..1. Size:59K  1
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SI6821DQ

Si6821DQNew ProductVishay SiliconixP-Channel, Reduced Qg, MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.190 @ VGS = 4.5 V "1.720200.280 @ VGS = 3.0 V "1.3 SCHOTTKY PRODUCT SUMMARYVF (V)VKA (V) Diode Forward Voltage IF (A)20 0.5 V @ 1 A 1.5S KTSSOP-8D K G1 8DS A2 7Si6821DQS A3 6G A4 5D ATop ViewABSO

 9.1. Size:68K  vishay
 si6820dq.pdf pdf_icon

SI6821DQ

Si6820DQVishay SiliconixN-Channel, Reduced Qg, MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.160 @ VGS = 4.5 V "1.920200.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARYVF (v)VKA (V) Diode Forward Voltage IF (A)20 0.5 V @ 1 A 1.5D KTSSOP-8D K G1 8DS A2 7Si6820DQS A3 6G A4 5S ATop ViewABSOLUTE MAXIMUM RATINGS (TA

Datasheet: SI4810DY , SI4812DY , SI4816DY , SI4818DY , SI4831DY , SI4832DY , SI4833DY , SI6820DQ , IRLB4132 , SI6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , SML1001R3BN , SML1001R3HN .

Keywords - SI6821DQ MOSFET datasheet

 SI6821DQ cross reference
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