SI6821DQ MOSFET Datasheet: P-Ch, 20V, 1.7A. Full specification with pinout and replacement list

SI6821DQ Specs and Replacement

   Type Designator: SI6821DQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TSSOP8

SI6821DQ substitution

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SI6821DQ datasheet

..1. Size:59K 1
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Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.190 @ VGS = 4.5 V "1.7 20 20 0.280 @ VGS = 3.0 V "1.3 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 S K TSSOP-8 D K G 1 8 D S A 2 7 Si6821DQ S A 3 6 G A 4 5 D A Top View ABSO... See More ⇒

9.1. Size:68K vishay
si6820dq.pdf pdf_icon

Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.160 @ VGS = 4.5 V "1.9 20 20 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VF (v) VKA (V) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A 1.5 D K TSSOP-8 D K G 1 8 D S A 2 7 Si6820DQ S A 3 6 G A 4 5 S A Top View ABSOLUTE MAXIMUM RATINGS (TA ... See More ⇒

Detailed specifications: SI4810DY , SI4812DY , SI4816DY , SI4818DY , SI4831DY , SI4832DY , SI4833DY , SI6820DQ , CS150N03A8 , SI6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , SML1001R3BN , SML1001R3HN .