BSZ084N08NS5 PDF and Equivalents Search

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC co... See More ⇒

&+ $ "& '! $ $ '>.;?6?@ $>E V Features DS 8.6 m R C ?8=6 ) 92??6= ? , ( DS(on) max 1) 40 A R * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C D R U @A6B2D ?8 D6>A6B2DEB6 PG TSDSON 8 R . CA64 2==I CE D65 7@B ?@D63@@A= 2?D R 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 R "2=@86? 7B66 244@B5 ?8 D@ # Type Pac... See More ⇒

%* ! % E #;B 1= "% & #=;0@/? %@9 9 -=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x 4 Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) G D ON Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 ,... See More ⇒

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary VDS -30 V Features RDS(on),max 8.6 single P-Channel in S3O8 mW Qualified according JEDEC1) for target applications ID -40 A PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applications GS Pb-free; RoHS compliant applications battery management, load switchin... See More ⇒

$) $ D $0 S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F 7D... See More ⇒

&+ $ "& '! $ $ '>.;?6?@ $>E Features V DS R C ?8=6 ) 92??6= ? , ( 8.6 m DS(on) max 1) R * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C 40 A D R U @A6B2D ?8 D6>A6B2DEB6 PG TSDSON 8 R . CA64 2==I CE D65 7@B ?@D63@@A= 2?D R , AB@D64D65 R 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 R "2=@86? 7B66 244@B5 ?8 ... See More ⇒