BSZ15DC02KD Datasheet and Replacement
Type Designator: BSZ15DC02KD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 114 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSDSON-8FL
BSZ15DC02KD substitution
BSZ15DC02KD Datasheet (PDF)
bsz15dc02kd.pdf

BSZ15DC02KD HOptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 55 Super Logic level (2.5V rated) mW VGS=2.5 V 310 95 Common drainID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% l
bsz15dc02kdh.pdf

BSZ15DC02KD HOptiMOS 2 + OptiMOSP 2 Small Signal TransistorProduct SummaryFeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 55 Super Logic level (2.5V rated) mVGS=2.5 V 310 95 Common drainID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% lead-f
bsz150n10ls3g.pdf

BSZ150N10LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V Ideal for high frequency switchingRDS(on),max 15 mW Optimized technology for DC/DC convertersID 40 A Excellent gate charge x R product (FOM)DS(on) N-channel, Logic level 100% avalanche testedPG-TSDSON-8 Pb-free plating; RoHS compliant Qualified according to JEDEC1)
Datasheet: BSZ0902NS , BSZ0902NSI , BSZ0904NSI , BSZ0907ND , BSZ0908ND , BSZ097N10NS5 , BSZ110N08NS5 , BSZ150N10LS3G , 4435 , BTS140A , BTS244Z , BTS282Z , BTS282ZE , 10N12 , 10N45 , 12N18 , 12N20 .
History: SI3134KL3 | AP20T15GM-HF | FDM606P | AONV420A70 | BSZ018N04LS6 | HY6N60T | UT100N03-Q
Keywords - BSZ15DC02KD MOSFET datasheet
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History: SI3134KL3 | AP20T15GM-HF | FDM606P | AONV420A70 | BSZ018N04LS6 | HY6N60T | UT100N03-Q



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