BSZ15DC02KD
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ15DC02KD
Marking Code: 15DC02KD
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 5.1
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 2.1
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 114
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package: TSDSON-8FL
BSZ15DC02KD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ15DC02KD
Datasheet (PDF)
..1. Size:513K infineon
bsz15dc02kd.pdf
BSZ15DC02KD HOptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 55 Super Logic level (2.5V rated) mW VGS=2.5 V 310 95 Common drainID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% l
0.1. Size:385K infineon
bsz15dc02kdh.pdf
BSZ15DC02KD HOptiMOS 2 + OptiMOSP 2 Small Signal TransistorProduct SummaryFeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 55 Super Logic level (2.5V rated) mVGS=2.5 V 310 95 Common drainID -3.2 5.1 A Avalanche rated 175 C operating temperature Qualified according to AEC Q101 100% lead-f
9.1. Size:450K infineon
bsz150n10ls3g.pdf
BSZ150N10LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V Ideal for high frequency switchingRDS(on),max 15 mW Optimized technology for DC/DC convertersID 40 A Excellent gate charge x R product (FOM)DS(on) N-channel, Logic level 100% avalanche testedPG-TSDSON-8 Pb-free plating; RoHS compliant Qualified according to JEDEC1)
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