BTS282Z Datasheet and Replacement
Type Designator: BTS282Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 49 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 1090 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-263 TO-220-7
BTS282Z substitution
BTS282Z Datasheet (PDF)
bts282z.pdf
BTS 282 ZSpeed TEMPFET N-Channel Enhancement mode Logic Level Input 1VPT05167 Analog driving possible7 Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated High current pinningType Package Marking Ordering CodeVDS RDS(on)BTS 282 Z 49 V P-TO220-7-3 - Q67
bts282z bts282ze.pdf
Speed TEMPFETBTS 282 Z 11 77PG-TO220-7-180PG-TO220-7-3 Green Product (RoHS compliant) PG-TO220-7-230
bts282z.pdf
Speed TEMPFETBTS282ZSpeed TEMPFET 1 1 7PG-TO263-7-1PG-TO220-7-127 Green Product (RoHS compliant) AEC Quali
Datasheet: BSZ0907ND , BSZ0908ND , BSZ097N10NS5 , BSZ110N08NS5 , BSZ150N10LS3G , BSZ15DC02KD , BTS140A , BTS244Z , IRLZ44N , BTS282ZE , 10N12 , 10N45 , 12N18 , 12N20 , 12N45 , 12N45A , 15N05 .
History: 12P10G-TMS-T | BUK637-500B
Keywords - BTS282Z MOSFET datasheet
BTS282Z cross reference
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History: 12P10G-TMS-T | BUK637-500B
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