BTS282Z MOSFET. Datasheet pdf. Equivalent

   Type Designator: BTS282Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 49 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 155 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1090 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263 TO-220-7

BTS282Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BTS282Z Datasheet (PDF)

..1. Size:87K siemens
bts282z.pdf

BTS 282 ZSpeed TEMPFET N-Channel Enhancement mode Logic Level Input 1VPT05167 Analog driving possible7 Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated High current pinningType Package Marking Ordering CodeVDS RDS(on)BTS 282 Z 49 V P-TO220-7-3 - Q67

..2. Size:376K infineon
bts282z bts282ze.pdf