All MOSFET. SML1001R1HN Datasheet

 

SML1001R1HN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SML1001R1HN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   Cossⓘ - Output Capacitance: 2950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO258

 SML1001R1HN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SML1001R1HN Datasheet (PDF)

Datasheet: SI4832DY , SI4833DY , SI6820DQ , SI6821DQ , SI6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , P0903BDG , SML1001R3AN , SML1001R3BN , SML1001R3HN , SML1001RAN , SML1001RBN , SML1001RHN , SML10026DFN , SML1002R4AN .

 

 
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