All MOSFET. 2SK1081 Datasheet

 

2SK1081 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1081
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-3PN

 2SK1081 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1081 Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
 2sk1081.pdf

2SK1081 2SK1081

isc N-Channel MOSFET Transistor 2SK1081DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 8

 0.1. Size:165K  fuji
 2sk1081-01.pdf

2SK1081 2SK1081

 8.1. Size:183K  fuji
 2sk1089.pdf

2SK1081 2SK1081

N-channel MOS-FET2SK1089F-III Series 60V 0,035 35A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.2. Size:175K  fuji
 2sk1085-m.pdf

2SK1081 2SK1081

N-channel MOS-FET2SK1085-MF-III Series 150V 0,9 3A 20W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.3. Size:143K  fuji
 2sk1086.pdf

2SK1081 2SK1081

 8.4. Size:1246K  fuji
 2sk1082.pdf

2SK1081 2SK1081

 8.5. Size:163K  fuji
 2sk1082-01.pdf

2SK1081 2SK1081

 8.6. Size:200K  inchange semiconductor
 2sk1085-m.pdf

2SK1081 2SK1081

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1085-MFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.7. Size:203K  inchange semiconductor
 2sk1082.pdf

2SK1081 2SK1081

isc N-Channel MOSFET Transistor 2SK1082DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 9

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N7002MTF

 

 
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