2SK1386
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1386
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO-3PN
2SK1386
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1386
Datasheet (PDF)
..1. Size:203K inchange semiconductor
2sk1386.pdf
isc N-Channel MOSFET Transistor 2SK1386DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
8.1. Size:442K toshiba
2sk1381.pdf
2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 25 m (typ.) DS (ON) High forward transfer admittance : |Y | = 33 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode
8.2. Size:371K toshiba
2sk1380.pdf
www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com
8.3. Size:389K toshiba
2sk1382.pdf
2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 47 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-m
8.6. Size:168K fuji
2sk1388.pdf
N-channel MOS-FET2SK1388F-III Series 30V 0,022 35A 60W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.7. Size:64K inchange semiconductor
2sk1384.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1384 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage 20 V ID D
8.8. Size:204K inchange semiconductor
2sk1385.pdf
isc N-Channel MOSFET Transistor 2SK1385DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GS
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