2SK1386 Datasheet and Replacement
Type Designator: 2SK1386
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-3PN
2SK1386 substitution
2SK1386 Datasheet (PDF)
2sk1386.pdf

isc N-Channel MOSFET Transistor 2SK1386DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
2sk1381.pdf

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 25 m (typ.) DS (ON) High forward transfer admittance : |Y | = 33 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode
2sk1380.pdf

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Datasheet: 2SK1142 , 2SK1143 , 2SK1212 , 2SK1319 , 2SK1320 , 2SK1324 , 2SK1373 , 2SK1385 , IRF9640 , 2SK1401 , 2SK1401A , 2SK1507 , 2SK1547 , 2SK1548 , 2SK1553 , 2SK1554 , 2SK1562 .
History: AP6679GI | SE4946 | 4N60KL-TMS4-T | IRF9242 | RU40P4H | BSL303SPE | PJM3401PSC
Keywords - 2SK1386 MOSFET datasheet
2SK1386 cross reference
2SK1386 equivalent finder
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History: AP6679GI | SE4946 | 4N60KL-TMS4-T | IRF9242 | RU40P4H | BSL303SPE | PJM3401PSC



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