2SK1386 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK1386 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 25 m (typ.) DS (ON) High forward transfer admittance Y = 33 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 47 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement-m

N-channel MOS-FET 2SK1388 F-III Series 30V 0,022 35A 60W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1384 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage 20 V ID D

isc N-Channel MOSFET Transistor 2SK1385 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 800 V DSS GS