2SK1554
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1554
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
TO-220F
2SK1554
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1554
Datasheet (PDF)
..1. Size:210K inchange semiconductor
2sk1554.pdf
isc N-Channel MOSFET Transistor 2SK1554DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =650 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.2. Size:211K inchange semiconductor
2sk1550.pdf
isc N-Channel MOSFET Transistor 2SK1550DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.3. Size:211K inchange semiconductor
2sk1553.pdf
isc N-Channel MOSFET Transistor 2SK1553DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =650 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 6
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