2SK1876 Datasheet and Replacement
Type Designator: 2SK1876
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220
2SK1876 substitution
2SK1876 Datasheet (PDF)
2sk1876.pdf
isc N-Channel MOSFET Transistor 2SK1876DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a
2sk1875.pdf
2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low C : C = 7.5 pF (typ.) iss issMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage
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