2SK1876
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1876
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65
Ohm
Package:
TO220
2SK1876
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1876
Datasheet (PDF)
..2. Size:220K inchange semiconductor
2sk1876.pdf
isc N-Channel MOSFET Transistor 2SK1876DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a
8.1. Size:287K toshiba
2sk1875.pdf
2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low C : C = 7.5 pF (typ.) iss issMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage
8.4. Size:54K inchange semiconductor
2sk1879.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1879 DESCRIPTION Drain Current ID=45A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage 30 V I
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