RFM4N40 Specs and Replacement
Type Designator: RFM4N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3
RFM4N40 substitution
- MOSFET ⓘ Cross-Reference Search
RFM4N40 datasheet
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf
RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi... See More ⇒
Detailed specifications: 3N75, 40N05, 40N06, SUB45N05-20L, SUP45N05-20L, 45N06, 45N20, RFM4N35, IRF830, 4N60AS, 50N06FI, 5NA80, 60N06-14, 75N05E, 8N90A, 9N80A, 9N90L-T3P
Keywords - RFM4N40 MOSFET specs
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