RFM4N40 MOSFET. Datasheet pdf. Equivalent
Type Designator: RFM4N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3
RFM4N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFM4N40 Datasheet (PDF)
..1. Size:42K harris semi
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