BUK445-60H Datasheet and Replacement. Cross Reference Search

BUK445-60H Datasheet (PDF)

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Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22.5 AAutomotive applications, Switched Ptot Total power dissipatio

5.1. Size:347K philips
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5.2. Size:230K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-600A/BDESCRIPTIONDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE

5.3. Size:230K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK445-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 60N06-14 , 75N05E , 8N90A , 9N80A , 9N90L-T3P , BUK444-200A , BUK444-800 , BUK445-200B , 5N50 , BUK453-60B , BUK452-60A , BUK452-60B , BUK453-100B , BUK453-60A , BUK454-200A , BUK445-60B , BUK454-200B .