BUK445-60H - аналоги, параметры транзистора - Справочник транзисторов

BUK445-60H даташит

..1. Size:109K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total power dissipatio

5.1. Size:347K philips
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5.2. Size:230K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-600A/B DESCRIPTION Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE

5.3. Size:230K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK445-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(T =25 )

Другие MOSFET... 60N06-14 , 75N05E , 8N90A , 9N80A , 9N90L-T3P , BUK444-200A , BUK444-800 , BUK445-200B , IRFP064N , BUK453-60B , BUK452-60A , BUK452-60B , BUK453-100B , BUK453-60A , BUK454-200A , BUK445-60B , BUK454-200B .