BUK453-100B PDF and Equivalents Search

 

BUK453-100B Specs and Replacement

Type Designator: BUK453-100B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-220AB

BUK453-100B substitution

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BUK453-100B datasheet

 4.1. Size:57K  philips
buk453-100a-b 2.pdf pdf_icon

BUK453-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 14 13 A (SMPS), ... See More ⇒

 4.2. Size:228K  inchange semiconductor
buk453-100.pdf pdf_icon

BUK453-100B

isc N-Channel MOSFET Transistor BUK453-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU... See More ⇒

 7.1. Size:54K  philips
buk453-60a-b.pdf pdf_icon

BUK453-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor... See More ⇒

 7.2. Size:54K  philips
buk453-60a-b 1.pdf pdf_icon

BUK453-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK453 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor... See More ⇒

Detailed specifications: 9N90L-T3P, BUK444-200A, BUK444-800, BUK445-200B, BUK445-60H, BUK453-60B, BUK452-60A, BUK452-60B, IRF3205, BUK453-60A, BUK454-200A, BUK445-60B, BUK454-200B, BUK455-60A, BUK455-60B, BUK445-60A, BUK456-60A

Keywords - BUK453-100B MOSFET specs

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